In the absence of parasitic capacitances ( drain diffusion capacitance and wire capacitance ), the result is " a fan out of e " ( now N ~ ln ( C load / C in ).
2.
Each net will include at least one driver, which must contain a source or drain diffusion ( in newer technology implantation is used ), and at least one receiver, which will consist of a gate electrode over a thin gate dielectric ( see Figure 2 for a detailed view of a MOS transistor ).
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